Non-DMS related ferromagnetism in transition metal doped zinc oxide

Non-DMS related ferromagnetism in transition metal doped zinc oxide

We review pitfalls in recent efforts to make a conventional semiconductor, namely ZnO, ferromagnetic by means of doping with transition metal ions. Since the solubility of those elements is rather low, formation of secondary phases and the creation of defects upon low temperature processing can lead to unwanted magnetic effects. Among others, ion implantation is a method of doping, which is hig...

Transition-metal doped zinc oxide nanowires.

The introduction of impurity atoms into semiconducting materials is the primary method for controlling the properties of the semiconductor, such as band gap or electrical conductivity. This practice is routinely performed with bulk semiconductors and, more recently, has been extended to nanoscale semiconductors as well. In particular, II–VI and III–V semiconductors that have been doped with tra...

Transition Metal-Doped Oxide Semiconductor Exhibiting Room-Temperature Ferromagnetism

Metal–Insulator Transition in Zinc-Doped LaSrCuO

The magnetotransport in the vicinity of the metal–insulator transition in La1.85Sr0.15CuxZn1−xO4 is studied in the mK temperature range. Both longitudinal and transverse magnetoresistance are negative indicating the importance of spin effects. The magnitude of transverse magnetoresistance is larger than the magnitude of longitudinal magnetoresistance, indicating the absence of positive orbital ...

A search for ferromagnetism in transition-metal-doped piezoelectric ZnO

We present the results of a computational study of ZnO in the presence of Co and Mn substitutional impurities. The goal of our work is to identify potential ferromagnetic ground states within the (Zn,Co)O or (Zn,Mn)O material systems that are also good candidates for piezoelectricity. We find that, in contrast to previous results, robust ferromagnetism is not obtained by substitution of Co or M...